磁控溅射法制备低电阻率Ta薄膜研究  

Preparation of low resistivity tantalum film deposited by magnetron sputtering

作　　者：邵花[1] 王文东[1] 刘训春[1] 夏洋[1] 

机构地区：[1]中国科学院微电子研究所微电子器件与集成技术重点实验室,北京100029

出　　处：《功能材料》2013年第18期2625-2629,共5页Journal of Functional Materials

基　　金：国家科技重大专项02专项资助项目(2009ZX02001-002)

摘　　要：在无匹配层、常温、溅射气体为纯Ar的条件下,利用直流磁控溅射法在Si表面制备了Ta薄膜,系统研究了工作气压及直流功率对薄膜电阻率及微观结构的影响。分别用四探针测试仪、X射线衍射仪、原子力显微镜对不同条件下制备的Ta薄膜电阻率、相结构及表面形貌进行表征。结果发现,随溅射气压升高,高阻β相出现,薄膜电阻率随之增大;在相同溅射气压下,随着溅射功率的增加,薄膜电阻率先降低后升高。优化溅射工艺后制得的Ta薄膜的电阻率低至29.7μΩ·cm。Tantalum films deposited on silicon substrates by DC magnetron sputtering at different sputtering pressure and sputtering power, which were prepared in pure argon at room temperature without underlayer, have been studied. The film resistivity, crystalline phase and surface morphology were investigated with four point probe, X-ray diffraction and atomic force microscope. The results showed that the film resistivity in creased due to the appearance of tetragonal crystalline structure （Q-phase） with increasing the sputtering pressure. Under the same sputtering pressure, the film resistivity first decreased and then increased when the sputtering power gradually increased. Lowest film resistivity which was 29.7μΩ·cm, has been obtained at an opti mized condition.

关 键 词：磁控溅射 TA 薄膜电阻率 

分 类 号：TN304.1[电子电信—物理电子学] TN405.97