磁控溅射Y_2O_3种子层对Gd_2Zr_2O_7厚度效应的影响  

THICKNESS EFFECT OF Gd_2Zr_2O_7 ON Y_2O_3 SEED LAYERS USING DC REACTIVE SPUTTERING

作　　者：赵荣[1] 范峰[1] 邱文彬[1] 鲁玉明[1] 刘志勇[1] 蔡传兵[1] 

机构地区：[1]上海大学物理系,超导与应用技术研究中心,上海200444

出　　处：《低温物理学报》2013年第5期333-338,共6页Low Temperature Physical Letters

基　　金：上海市科委(批准号:10dz1203500);国家973项目(批准号:2009AA03Z204);国家自然科学基金(批准号:A040204)资助的课题~~

摘　　要：本文研究反应磁控溅射法在双轴织构Ni-5at．％W（NiW）金属基底上动态外延生长Y2O3和Gd2Zrz07（GZO）及其对后续氧化物和超导层织构的影响．证实了动态磁控溅射Y20s是十分有效的种子层材料．X射线衍射θ～2θ扫描以及极图测试表明Y203种子层能在较宽的参数窗口很好地在NiW基底上外延生长．通过扫描电子显微镜（SEM）和原子力显微镜（AFM）表面形貌观察，显示Y2（）3薄膜表面平整，粗糙度在1．5nm左右．进一步在Y2O3上外延生长GZO缓冲层，研究了其厚度效应及其对后续gga2CuaO7-（（YBCO）超导层的影响，通过对比分析它们面内半高宽以及超导转变温度Tc和△Tc变化规律，得出GZO的优化厚度为120nm。Double-layer buffer structures such as, Gd2Zr2O7 （GZO） / Y2O3 are prepared by DC reactive sputte- ring, proving theY2O3 as significant seed layer on Ni-5at%W （NiW） substrate. The AFM micrographs show that the surface of Y20a seed layers is homogeneous and flat with the RMS value less than 1.5 nm. It is revealed that Y203 seed layers play a key role for GZO buffer layer epitaxial growth＇evidenced by allow a better smooth surface, due to a less lattice parameter mismatch. The effects of GZO buffer layers thicknesses are investigated as well by subsequently YBCO deposition. Detailed X-ray φ-scan full width at half maximum （FWHM） values and the trans- port Tc measurements and the transition width △T all indicated that the GZO buffer layer with 120nm thickness was a suitable alternative for the second generation high Tc superconducting coated conductors architecture.

关 键 词：磁控溅射 种子层 Y2O3 涂层导体 YBCO 

分 类 号：TM26[一般工业技术—材料科学与工程]