金属诱导横向晶化非晶硅薄膜技术及新发展  

Technology and New Development of the Metal Induced Lateral Crystallization for the Amorphous Silicon Thin Film

作　　者：李冬雪[1] 汪浩[2] 夏委委[1] 刘超然[1] 李天昊[1] 段智勇[1] 

机构地区：[1]郑州大学物理工程学院,郑州450001 [2]电子科技大学电子工程学院,成都611731

出　　处：《微纳电子技术》2013年第9期592-598,共7页Micronanoelectronic Technology

基　　金：国家自然科学基金资助项目(51175479)

摘　　要：金属诱导横向晶化技术(MILC)由于具有晶化温度低、晶化颗粒大等优点而获得了快速发展。阐述了金属诱导横向晶化非晶硅薄膜的晶化机理、晶化效果及影响晶化效果的主要参数,并介绍了基于多种辅助措施,如离子掺杂、电磁场辅助、微波退火、激光退火、氮硅化合物覆盖法和焦耳热升温法等方法,以优化金属诱导横向晶化非晶硅薄膜。辅助措施均有利于增强晶化效果,更易获得大面积无孪晶多晶硅薄膜,并具有较高的载流子迁移率。最后提出采用微纳金属阵列结构调控晶化能量,实现低温、高速、大晶粒直径的多晶硅薄膜制备新方法。The technology of the metal induced lateral crystallization （MILC） develops quickly because of the advantages as low crystallization temperature and large crystallization particles. The crystallization mechanism, effect and main influential parameters of the MILC amorphous silicon thin film are presented. Some assistant methods to optimize the MILC amorphous silicon thin film are introduced, including the ion doping, addition of the electromagnetic field, micro- wave annealing, laser annealing, nitrogen silicon compounds covering method and Joule heating method. And these methods can enhance the crystallization effect. In addition, with these sup- plementary measures, it is easier to manufacture a large area of the poly-Si thin film, which has no twin crystal and high carrier mobility. Finally, a novel fabrication method is proposed, which can be used to achieve the low-temperature, high-speed and large-particle poly-Si thin film by using the micro-nano metal array structure to regulate the crystallization energy.

关 键 词：金属诱导 横向晶化 低温 活化能 多晶硅薄膜 

分 类 号：TB43[一般工业技术]