不同剂量率下锗硅异质结双极晶体管电离损伤效应研究  

Study on ionization damage of silicon-germanium heterojunction bipolar transistors at various dose rates

作　　者：孙亚宾[1,2] 付军[1,2] 许军[1,2] 王玉东[1,2] 周卫[1,2] 张伟[1] 崔杰[1] 李高庆[1] 刘志弘[1] 

机构地区：[1]清华大学微电子学研究所,北京100084 [2]清华大学信息科学与技术国家实验室,北京100084

出　　处：《物理学报》2013年第19期375-381,共7页Acta Physica Sinica

基　　金：国家自然科学基金(批准号:60976013)资助的课题~~

摘　　要：对于相同制作工艺的NPN锗硅异质结双极晶体管(SiGe HBT),在不同辐照剂量率下进行60Coγ射线的辐照效应与退火特性的研究.测量结果表明,两种辐照剂量率下,随着辐照总剂量增加,晶体管基极电流增大,共发射极电流放大倍数降低,且器件的辐照损伤、性能退化与辐照剂量率相关,低剂量率下辐照损伤较高剂量率严重.在经过与低剂量率辐照等时的退火后,高剂量率下的辐照损伤仍较低剂量率下的损伤低,即待测SiGeHBT具有明显的低剂量率损伤增强效应(ELDRS).本文对相关的物理机理进行了探讨分析.Ionizing radiation effects in silicon-germanium （SiGe） heterojunction bipolar transistors （HBTs） at different dose rates were investigated. Experimental results show that the base current increases with increasing accumulated dose for the high and low dose rates of irradiation, causing a significant drop in current gain. Besides, the lower the dose rate, the higher the radiation damage, which demonstrates a significantly enhanced low-date-rate sensitivity （ELDRS） effect in the SiGe HBTs. The different degradation behaviors for high and low dose rates of irradiation are compared with each other and discussed;furthermore, the underlying physical mechanisms are analyzed and investigated in detail

关 键 词：锗硅异质结双极晶体管 低剂量率辐照损伤增强 辐照效应 

分 类 号：TN322.8[电子电信—物理电子学]