IC长贮存寿命评价方法  

Assessment of IC Reliability in Long Storage Life Test

作　　者：管光宝[1] 尹颖 章慧彬[1] 

机构地区：[1]中国电子科技集团公司第58研究所,江苏无锡214035

出　　处：《电子与封装》2013年第9期40-43,共4页Electronics & Packaging

摘　　要：高可靠长寿命产品在军事、航空航天、电子工业、通信等领域应用越来越广泛,如何保障其可靠性与预测其寿命是值得深入研究的重要问题。越来越多的单位,特别是航空航天系统的单位,对其选用的产品提出了具有32年贮存寿命要求的高可靠性指标。长寿命及超长寿命的电子元器件的贮存寿命评价是以加速试验为评价方法的。建立准确的失效机理及模型是评价正确与否的关键。文章通过收集大量高温贮存及常温贮存的实测数据,建立失效模型,推算出应力条件及相应的加速因子。文中实践证明,通过模型仿真出的贮存寿命具有高的可信度。High reliability, long storage life devices have been wildly applied in military, aviation, electronic industry, communication area. To estimate the actual storage life seems important in reliability assurance. More and more companies, especially aircraft manufactures, set up a 32 years long storage life requirement in IC reliability. Electronic device＇s long storage life can be only estimated by accelerated way. The running model with applicable failure mechanism is extremely critical in reliability assessment. Testing the device＇s parameter after step storage with kinds of temperature simulating different accelerating stress, find out the right failure mechanism. Experimental data shows its high credibility by following this way.

关 键 词：长贮存寿命 失效模型 失效机理 加速因子 

分 类 号：TN306[电子电信—物理电子学]