钼/聚酰亚胺异质结上体声波用氮化铝薄膜生长(英文)  

Aluminum Nitride Thin Films on Molybdenum/Polyimide Heterostructure for Bulk Acoustic Resonators

作　　者：褚夫同[1] 李川[1] 汪振中[1] 刘兴钊[1] 

机构地区：[1]电子科技大学电子薄膜与集成器件国家重点实验室,四川成都610054

出　　处：《稀有金属材料与工程》2013年第10期2023-2026,共4页Rare Metal Materials and Engineering

摘　　要：采用中频反应磁控溅射方法,在钼/聚酰亚胺/硅(Mo/PI/Si)基片上室温下制备出c轴取向柱状结晶氮化铝(AlN)薄膜,X射线衍射摇摆曲线和拉曼谱E2(高)峰半高宽分别是2.2°和18.6 cm-1。制作了基于Mo/AlN/Mo/PI/Si结构的薄膜体声波谐振器(FBARs),PI/Mo异质结用作声绝缘层。用矢量网络分析仪分析了FBARs的谐振特性,器件等效耦合系数达到5.4%。The c-axis textured aluminum nitride （AlN） thin films with columnar grains perpendicular to Molybdenum（Mo）/Polyimide（PI）/Si（111） substrate could be obtained through reactive magnetron sputtering at room temperature.The full width at half maximum of the X-ray diffraction rocking curves and E2 （high） peak of Raman spectrum of the AlN thin films were 2.2° and 18.6 cm-1,respectively.The thin film bulk acoustic resonators （FBARs） with Mo/AIN/Mo/PI/Si （111） configuration were fabricated,and a PI/Mo heterostructure was used as acoustic isolation layer for the FBARs.The resonant frequency response of the FBARs was measured using a vector network analyzer,and an effective coupling coefficient of 5.4％ was achieved.

关 键 词：ALN 薄膜 聚酰亚胺 FBARs 

分 类 号：TN629.1[电子电信—电路与系统] TB43[一般工业技术]