基于异步保存及互锁存储单元的抗SEE触发器设计  

Design of Single Event Effect Hardened Flip-flop Based on Asynchronous Keep and Interlocked Storage Cell

作　　者：张筱颖[1,2] 李博[2] 周昕杰[2] 于跃[2] 陈嘉鹏[2] 于宗光[1,2] 

机构地区：[1]江南大学物联网工程学院,江苏无锡214122 [2]中国电子科技集团公司58所,江苏无锡214035

出　　处：《固体电子学研究与进展》2013年第5期497-500,共4页Research & Progress of SSE

基　　金：江苏省333人才工程科研资助项目(BRA2011115)

摘　　要：利用Muller_C单元,设计一种异步保存及互锁存储单元结构,该结构采用状态锁存机制和增加节点电容方法,能有效防止单粒子翻转效应的发生,同时也可提高电路抗单粒子瞬变和多节点扰动效应的能力。在0.18μm工艺条件下用此结构设计的D触发器,面积为1 422μm2,动态功耗为0.42mW,建立时间为0.2ns,保持时间为0.03ns。实验结果表明:利用触发器链验证电路,在时钟频率为20 MHz时,单粒子LET翻转阈值为31MeV·cm2/mg,比双互锁存储单元结构的抗单粒子能力提高40%。An asynchronous keep and interlocked storage cell （AKISSC） structure is designed using the Muller C-celh The structure can effectively prevent the single event upset （SEU） oc- curring, and improve the capacity of resistance to single event transient circuit （SET） and multi- ple bit upset effect （MBU） by using the latch mechanism and increasing the node capacitance. The structure is applied to the D flip-flop fabricated with 0. 18 gm process, it has the area of 1 422 μm2 , the dynamic power consumption 0.42 mW, the settling time 0.2 ns, the holding time 0.03 ns. Experimental result show that when the frequency is 20 MHz, single event upset threshold is 31 MeV cm2/mg, and the capacity of single event effect hardened is increased by 40% more than the double interlocked storage cell （DICE） structure.

关 键 词：辐射加固 单粒子效应 C单元 触发器 

分 类 号：TN386[电子电信—物理电子学] TN783