高温热解聚硅烷制备SiC薄膜初探  

PROBES ON PREPARING SiC FILM BY PYROLYSIS OF POLYSILOXANE

作　　者：易春[1] 谢茂浓[1] 彭志坚[2] 向少华 傅鹤鉴[2] 

机构地区：[1]四川大学物理系,四川成都610064 [2]四川大学化学系,四川成都610064

出　　处：《广西师范大学学报（自然科学版）》2000年第3期20-23,共4页Journal of Guangxi Normal University:Natural Science Edition

基　　金：国家自然科学基金资助项目!( 2 91 71 0 2 4 )

摘　　要：用组合成的可溶性聚硅烷 1 71 0 A作涂膜材料 ,进行不同温度的真空热解或高纯氮下热解实验 .通过IR谱和 XPS谱分析 ,在 790～ 81 0 cm-1和 1 2 70 cm-1红外吸收特征峰分别对应 Si— CH3 摇摆振动和伸缩振动吸收峰 ,XP—Si谱给出 Si( 2 P)结合能为 1 0 1 .6e V,CIS为 2 84 .3 e V,证明有 α-Si C∶ H生成 .Using compositional soluble polysiloxane 1710A as film coating material,vacuum or high purity nitrogen pyrolysis experiments are made in different temperatures.By analysis of IR and XPS spectrums,it is shown by XPS spectrum that combinational energy of Si(2P) is 101.6eV,and that of C IS is 284.3eV,where characteristic peaks of infraved absorption with 790～810cm -1 and 1270cm -1 correspond to absorption peaks of Si CH 3 swing vibration and elastic vibration respectively.It is proved that there exists α SiC∶H.

关 键 词：聚硅烷 高温热解 IR谱 半导体材料 碳化硅薄膜 

分 类 号：TN304.24[电子电信—物理电子学]