砷化镓单晶的等效微重力生长  

Growth of crystal GaAs in equivalent micro-gravity

作　　者：徐岳生[1] 李养贤[1] 刘彩池[1] 王海云[1] 郝秋艳[1] 

机构地区：[1]河北工业大学材料学院,天津300130

出　　处：《功能材料与器件学报》2000年第4期309-311,共3页Journal of Functional Materials and Devices

基　　金：国家自然科学基金!资助项目 (No .59972 0 0 7)

摘　　要：论述了砷化镓晶体的等效微重力生长的原理和所采用的方法 ,并讨论了主要结果。The growth principle and the used method of crystal GaAs in equivalent micro gravity were discussed. In condition of equivalent micro gravity, diffusion is the only way of mass transportation and no macro convection occurred in the melt. The permanent magnet was used to induce magnetic field in this study, homogeneity of crystal GaAs was largely improved and the density of dislocation was reduced.

关 键 词：扩散机理 砷化镓单晶 等效微重力生长 

分 类 号：TN304.23[电子电信—物理电子学] TN304.053