Si基GaN上的欧姆接触  

Ohmic contacts on Si-substrated GaN

作　　者：赵作明[1] 江若琏[1] 陈鹏[1] 席冬娟[1] 沈波[1] 郑有炓[1] 

机构地区：[1]南京大学物理系,南京210093

出　　处：《功能材料与器件学报》2000年第4期425-427,共3页Journal of Functional Materials and Devices

基　　金：国家自然科学基金!资助项目 ( 699870 0 1;696360 10 ;6980 60 0 6)

摘　　要：研究了Si基GaN上的欧姆接触。对在不同的合金化条件下铝 (Al)和钛铝铂金(Ti Al Pt Au)接触在不同的合金化条件下的性质作了详尽的分析。Al GaN在 45 0℃氮气气氛退火 3min取得最好的欧姆接触率 7.5× 1 0 3Ω·cm2 ,而Ti Al Pt Au GaN接触在 6 5 0℃氮气气氛退火 2 0s取得最好的欧姆接触 8.4× 1 0 5Ω·cm2 ,而且Ti Al Pt Au GaN接触有较好的热稳定性。Al and Ti/Al/Pt/Au Ohmic contacts were studied on GaN epitaxial layers grown by lamp-heating low pressure metalorganic chemical vapor deposition on Si(111) substrrates. Al and GaN contacts achieved the minimum contact resistivity of 7.5×10 3 Ω cm 2 after annealing in N 2 for 3 min at 600℃, and the further annealing degraded the contacts. Ti/Al/Pt/Au and GaN contacts achieved the minimum contact resistivity of 8.4×10 5 Ωcm 2 after annealing in N 2 for 20 second at 650℃, and these contacts showed a better thermal stability than Al/GaN contacts.

关 键 词：欧姆接触 硅基氮化镓 合金化 退火 热稳定性 

分 类 号：TN304.23[电子电信—物理电子学] TN305.93