沉积条件对RF反应溅射多晶ZnO薄膜结构的影响  

Effect of deposition condition on structure of RF reactively sputtered polycrystalline ZnO films

作　　者：龚恒翔[1] 阎志军[1] 杨映虎[1] 王印月[1] 

机构地区：[1]兰州大学物理科学与技术学院,兰州730000

出　　处：《功能材料与器件学报》2000年第4期428-431,共4页Journal of Functional Materials and Devices

基　　金：国家自然科学基金!资助项目 (No .698760 17)

摘　　要：采用RF反应溅射法在Si(1 1 1 )、玻璃衬底上制备了具有良好C轴取向的多晶ZnO薄膜。用XRD分析了沉积条件 (衬底温度、工作气体中的氧与氩气压比和衬底种类 )对样品结构的影响。发现 (1 )薄膜的取向性随着衬底温度的升高而增强 ,超过40 0℃后薄膜质量开始变差 ;(2 )工作气体中氧与氩气压比 (PO2 PAr)为 2 :3时 ,薄膜取向性最好 ;(3)薄膜晶粒尺寸 1 1～ 34nm ,相同沉积条件下 ,单晶硅衬底样品 (0 0 2 )衍射峰强度减弱 ,半高宽无明显变化。Polycrystalline ZnO films are prepared by RF reactive sputtering technique on Si(111)and glass wafer under different O 2 /Ar pressure ratio k and substrate temperature. X ray diffraction technique (XRD) is employed to analyze theeffect of deposition condition on structure of thefilms. With the increase of substrate temperature from room temperature (RT) to 400℃, the films deposited on glass appear a preferred orientation with the c axis perpendicular to the substrate. Pressure ratio of O 2 to Ar in work gas, expressed by k(P O 2 /P Ar ), has an effect on orientation of the films, which have highly preferred orientation when k=2:3. Thegrain size is in the range of 11nm to 34nm calculated by XRD data with the Scherrer formula. It was found that under the same deposition condition, compared with the films deposited on glass, the intensity of (002) peak of the films deposited on Si(111) is weaker, however, the full width at half maximum (FWHM) of the peak hasfew change.

关 键 词：ZNO薄膜 RF反应溅射 沉积条件 择优取向 

分 类 号：TN304.21[电子电信—物理电子学] TN305.92