半导体器件的长期贮存失效机理及加速模型  

Long-Term Storage Failure Mechanism of Semiconductor Devices and Their Accelerated Modeling

作　　者：罗俊[1,2] 向培胜[3] 赵胜雷[2] 王毅[2] 刘涛[4] 陈光炳[4] 

机构地区：[1]中国电子科技集团公司第二十四研究所,重庆400060 [2]西安电子科技大学微电子学院宽禁带半导体材料与器件重点实验室,西安710071 [3]中国人民解放军驻重庆气体压缩机厂军代室,重庆400060 [4]模拟集成电路重点实验室,重庆400060

出　　处：《微电子学》2013年第4期558-563,571,共7页Microelectronics

基　　金：模拟集成电路重点实验室基金资助项目(9140C090406120C09037)

摘　　要：加速应力试验是评价长期贮存一次性使用半导体器件贮存可靠性的最重要途径之一。针对半导体器件不同的失效机理,选择合理、准确的加速应力模型,是定量分析半导体器件贮存寿命的基础。介绍了半导体器件在长期贮存时的主要失效机理及其加速应力模型,给出了这些模型的适用条件。Accelerated stress test is one of the most important approaches to evaluating storage reliability of semiconductor devices in long-term storage. Proper and accurate accelerated stress models were necessary for quantitative analysis on storage life of semiconductor devicex Main failure mechanisms and corresponding accelerated stress models for long-term storage of senaiconductor devices were reviewed, and compatible conditions for accelerated stress models were discussed.

关 键 词：半导体器件 长期贮存 失效机理 加速应力模型 

分 类 号：TN722.7[电子电信—电路与系统]