Ti／4H-SiCSBD中子辐照效应的研究  

Study on Neutron Radiation Effect of Ti/4H-SiC Schottky Barrier Diode

作　　者：邱彦章[1] 张林[1] 

机构地区：[1]长安大学电子与控制工程学院道路交通检测与装备工程技术研究中心,西安710064

出　　处：《微电子学》2013年第5期723-726,共4页Microelectronics

基　　金：陕西省自然科学基金资助项目(2013JQ7028)

摘　　要：采用1MeV的中子对Ti/4H-SiC肖特基势垒二极管(SBD)的辐照效应进行研究,观察了常温下的退火效应。实验的最高中子剂量为1×l015n/cm2,对应的γ射线累积总剂量为33kGy(Si)。经过1×1014 n/cm2的辐照后,Ti/SiC肖特基接触没有明显退化;剂量达到2.5×1014n/cm2后,观察到势垒高度下降;剂量达到1×1015 n/cm2后,势垒高度从1.00eV下降为0.93eV;经过常温下19h的退火后,势垒高度有所恢复,表明肖特基接触的辐照损伤主要是由电离效应造成的。辐照后,器件的理想因子较辐照前有所上升;器件的正向电流(VF=2V)随着辐照剂量的上升而下降。4H-SiC Schottky barrier diodes （SBD） were irradiated with 1 MeV neutrons and annealed at room temperature. The highest neutron flux in the experiment was 1 ×10^15 n/cmz , and the corresponding gamma total dose was 33 kGy（Si）. No obvious degradation was observed on Ti/4H-SiC Schottky contacts at 1×10^14 n/cm2 neutron flux： However, a decrease in barrier height was observed when neutron flux reached 2. 5 ×10^14 n/cmz, and the barrier height, which decreased from 1.00 eV to 0. 93 eV at 1 ×10^15 n/cm2 neutron fluk, recovered partly after 19 hours annealing at room temperature, which indicated that radiation damage of Schottky contacts was caused by ionizing effect. The ideality factor increased after radiation, and the forward current of the Ti/4H-SiC SBD decreased with increasing neutron flux.

关 键 词：碳化硅 肖特基势垒二极管 中子辐照 

分 类 号：TN386[电子电信—物理电子学]