DICE加固结构触发器的重离子实验研究  

Experimental Study of the Heavy Ion on the DICE Flip-Flop Structure

作　　者：张筱颖[1,2] 田海燕[2] 于宗光[1,2] 

机构地区：[1]江南大学物联网工程学院,江苏无锡214122 [2]中国电子科技集团公司58所,江苏无锡214035

出　　处：《电子器件》2013年第5期594-599,共6页Chinese Journal of Electron Devices

基　　金：江苏省333工程科研项目(BRA2011115)

摘　　要：基于0.18μm工艺平台,对双互锁存储单元DICE(Double Interlocked Storage Cell)结构的触发器电路进行重粒子试验,验证单粒子效应SEE(Single Event Effect)中的单粒子翻转SEU(Single Event Upset)对体硅CMOS工艺器件及电路的影响。对比分析不同频率、不同驱动能力、不同版图结构和不同电压这4种情况下的辐照数据,结果表明:当合理考虑DICE触发器的工作频率、工作电压、版图面积、结点驱动等因素时,电路的翻转次数可降为13次,翻转阈值达到33 MeV·cm2/mg。Fabricated by 0. 18 μm COMS process,the heavy ion experiment of the double interlocked storage cell（ DICE） flip-flop structure was done to verify the effects of the single event upset（ SET） on the bulk CMOS devices and circuits. The statistics were discussed under four different situations; data of different frequency,different driving ability,different layout,and different voltage were compared with each other. Results showed that when considered the frequency,voltage,layout areas and node driven factors reasonable of the DICE structure in practical work,the number of upset could reduce to 13,the energy threshold was 33 MeV·cm2/ mg.

关 键 词：抗辐照电路设计 DICE触发器 重粒子实验 单粒子效应 单粒子翻转 

分 类 号：TN43[电子电信—微电子学与固体电子学]