氢化非晶碳膜导电机制的探索  

A Probe into the Transport Mechanism of a-C:H Films

作　　者：马春兰[1] 

机构地区：[1]苏州铁道师范学院物理系,苏州215009

出　　处：《铁道师院学报》2000年第4期35-41,共7页Journal of Suzhou Railway Teachers College(Natural Science Edition)

摘　　要：采用电子回旋共振等离子体化学气相沉积 (ECR -CVD)方法 ,以苯为气源 ,在不同基片温度下制备了氢化非晶碳膜 (a -C :H) ,对样品进行了伏安特性测试。考察了基片温度对样品电阻率与击穿场强的影响 ,结合薄膜含氢量、SEM、Raman散射等分析手段探索了a -CElectron cyclotron resonance plasma chemical vapor deposition (ECR CVD) technique was used to prepare hydrogenated amorphous carbon films (a-C: H) from benzene at different substrate temperature. Characteristics of voltage current of the samples were measured. The effects of substrate temperature on resistance and break down electrical field intensity were investigated. Hydrogen content、SEM paragraph and Raman spectrum were combined to explore the transport mechanism of a-C:H films.

关 键 词：基片温度 导电机制 氧化非晶碳膜 ECR-CVD方法 

分 类 号：O484.42[理学—固体物理]