用于HIT太阳能电池的ITO薄膜制备与性能研究  

Study on Preparation and Properties of ITO Thin Films for HIT Solar Cells

作　　者：温迪[1] 雷青松 乔治[1] 高美伶 薛俊明 张雯[1] 

机构地区：[1]河北工业大学材料学院信息功能材料研究所,天津300130 [2]河北汉盛光电科技有限公司,衡水053000

出　　处：《人工晶体学报》2013年第10期2002-2006,2012,共6页Journal of Synthetic Crystals

基　　金：天津市自然科学基金(10JCYBJC03000)

摘　　要：采用中频脉冲磁控溅射工艺制备ITO薄膜，研究了衬底温度和溅射功率对薄膜性能的影响。通过对二者的优化，获得了方阻为2．99Ω／□，电阻率为1．76×10^-4Ω·cm，可见光波段（400—800nm）平均透过率为82．3％的ITO薄膜。将优化后的薄膜用于电池上，制出了转化效率为14．04％的HIT太阳能电池。The effects of substrate temperature and sputtering power on the properties of ITO thin films deposited by mid-frequency pulsed magnetron sputtering were investigated. High quality ITO thin films with the sheet resistance of 2.99 Ω/□ ,the resistivity as low as 1.76×10^-4Ω·cmand the optical transmittance of 82.3% in the visible spectrum raog, were obtained. With this optimum material, a 14. 04% conversion efficiency HIT solar cells was achieved.

关 键 词：ITO薄膜 衬底温度 溅射功率 HIT太阳能电池 

分 类 号：O484[理学—固体物理]