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作 者:高娇娇[1] 刘玉岭[1] 王辰伟[1] 曹阳[1] 陈蕊[1] 蔡婷[1]
出 处:《微纳电子技术》2013年第11期726-730,共5页Micronanoelectronic Technology
基 金:国家中长期发展规划重大科技专项资助项目(2009ZX02308)
摘 要:通过大量实验,研究了一种Ta高去除速率下的高选择性阻挡层抛光液,实现对碟形坑的有效修正以及表面粗糙度的有效降低。采用磷酸作为pH调节剂,改变pH值考察Ta和Cu选择性的变化规律,进而选取Ta高去除速率下的高选择性阻挡层抛光液。通过XP-300台阶仪及原子力显微镜等测试手段,表征此抛光液对碟形坑的修正能力及对Cu表面形貌的影响,结果表明,Ta和Cu材料的去除速率随pH值增大上升明显,可以通过调节pH值有效控制Ta和Cu的去除速率,实现Ta的去除速率明显大于Cu,并且实现碟形坑的有效修正及粗糙度的明显降低。Through a large number of experiments, the barrier slurry with a high selectivity and a high removal rate of tantalum was researched, and the effective correction of the slurry to the dishing and the effective decrease of the surface roughness were achieved. Using phosphoric acid as a pH adjustor, the change rules of the selectivities for tantalum and copper were studied by the variation of pH value, and the barrier slurry with a high selectivity and a high removal rate of tantalum was chosen. The ability of the slurry to correct the dishing and the influence of the slur- ry on the copper surface morphology were characterized by the test means of XP - 300 profiler and atomic force microscope, respectively. The results show that the removal rates of tantalum and copper obviously increase with the increase of pH value, then the removal rates of tantalum and copper are effectively controlled by regulation of pH value, thus it is possible that the removal rate of tantalum is obviously greater than that of copper, and the effective correction of the dis- hing and obvious decrease of the roughness are realized.
分 类 号:TN305.2[电子电信—物理电子学]
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