PECVD法氮化硅薄膜制备工艺的研究  

Research on Silicon Nitride Films Deposited by PECVD Technology

作　　者：汪文君[1] 孙建洁[1] 朱赛宁[1] 张世权[1] 

机构地区：[1]中国电子科技集团公司第58研究所,江苏无锡214035

出　　处：《电子与封装》2013年第11期40-43,共4页Electronics & Packaging

摘　　要：采用等离子体增强化学气相沉积法(PECVD)在单晶硅衬底上制备了氮化硅薄膜,分别使用膜厚仪、椭圆偏振仪等手段对薄膜的厚度、折射率等参数进行了表征。研究了硅烷氨气流量比、极板间距等工艺参数对氮化硅薄膜性能的影响,发现当硅烷氨气流量比增加时,薄膜厚度和折射率均随之增加,并发现退火工艺可以有效降低氮化硅薄膜的氢氟酸腐蚀速率。Silicon nitride thin films were deposited successfully on Si substrates by plasma-enhanced chemical vapor deposition （PECVD） . The thickness and refractive index of the thin films were tested by ellipsometer and profilometry, respectively. The influences of silane-ammonia flow ratio （SAR） and spacing on the performance of silicon nitride thin films were studied. Results showed that the thickness and refractive index of thin films increased with SAR, and the etching rate in HF decreased rapidly after annealing.

关 键 词：等离子体增强化学气相沉积法 氮化硅薄膜 硅烷氨气流量比 退火 

分 类 号：TN305[电子电信—物理电子学]