改进的硅各向异性腐蚀GPU并行模拟  

Improved parallel simulation of silicon anisotropic etching based on GPU

作　　者：陈劲源 李建华[1] 郭卫斌[1] 

机构地区：[1]华东理工大学信息科学与工程学院,上海200237

出　　处：《计算机应用》2013年第12期3317-3320,共4页journal of Computer Applications

基　　金：国家自然科学基金资助项目(60703026);国家科技重大专项(2011ZX09307-002-03)

摘　　要：硅各向异性腐蚀过程复杂,采用元胞自动机模拟硅各向异性腐蚀非常耗时。为了加速腐蚀模拟过程,研究了基于图形处理器(GPU)进行硅的各向异性腐蚀模拟。针对串行算法直接并行化方法存在加速效率低等问题,提出了一个改进的并行模拟方法。该方法增加了并行部分的负载,减少了内存管理的开销,从而提高了加速性能。实验证明该方法能够获得较理想的加速比。Silicon anisotropic etching simulation is time-consuming due to its complex chemical process. In order to accelerate the process, the GPU-based silicon anisotropic etching parallel simulation was discussed, and an improved parallel method was proposed to improve the direct parallelization of serial algorithms method with low efficiency. In this method, the parallel load of the direct parallelization was increased, the memory management cost was reduced, and the acceleration performance was improved. The experimental results show that the method can achieve a simulation with higher speedup.

关 键 词：各向异性腐蚀 元胞自动机 模拟 图形处理器 并行计算 

分 类 号：TP391[自动化与计算机技术—计算机应用技术] TP311[自动化与计算机技术—计算机科学与技术]