硅中的缺陷和硅片热处理  

Defects in Silicon and High Temperature Annealing of Silicon Wafers

作　　者：闵靖[1] 邹子英[1] 

机构地区：[1]上海市计量测试技术研究院,上海200233

出　　处：《上海有色金属》2000年第4期171-176,共6页Shanghai Nonferrous Metals

摘　　要：本文评述了近年来着重研究的COP、LSTD、FPD和BMD等硅中的微缺陷。介绍了硅片在氢或氩气中高温退火对消除硅中微缺陷 ,提高GOI合格率的实验结果。研究表明 ,硅片的高温退火是提高硅片质量的一种技术途径。This paper reviews microdefects in silicon lattice,such as COP,LSTD,FPD and BMD,etc,which were intensively studied in recent years.The experimental results for reducing microdefects in silicon and raising GOI yield by means of high temperature annealing of Si wafers in hydrogen or argon atmospheres are introduced.It is shown that this method is accepted as a technical solution to improve the quality of Si wafers.

关 键 词：晶体原生颗粒缺陷 流动图形缺陷 硅片 热处理 

分 类 号：TN304.12[电子电信—物理电子学]