GaAs中Be受主的光热电离光谱研究  

PHOTOTHERMAL IONIZATION SPECTROSCOPY OF BE ACCEPTOR IN GaAs

作　　者：袁先漳[1] 陆卫[1] 史国良[1] 陈益栋[1] 陈张海[1] 李宁[1] 沈学础[1] 

机构地区：[1]中国科学院上海技术物理研究所,红外物理国家重点实验室,上海200083

出　　处：《红外与毫米波学报》2000年第5期385-388,共4页Journal of Infrared and Millimeter Waves

基　　金：国家自然科学基金!(编号 196740 60 )资助项目&&

摘　　要：应用光热电离光谱方法研究了 MBE生长 Ga As薄膜中 Be受主的杂质能级 .通过与理论计算的比较 ,将观测到的 3个跃迁峰归属于 G线、C线和 D线跃迁 ,同时在实验上也观察到 Be受主 1s3/ 2 (Γ+ 8)态到 2 p1 / 2 (Γ- 6 )态跃迁 ,由实验结果算得 Be受主的电离能为 2 8.6 me V.The photothermal ionization spectroscopy (PTIS) was employed to study Be shallow acceptor states in MBE grown GaAs films. The G line, C line and D line transitions were observed and attributed to the ones from the ground state 1s 3/2 (Γ + 8) of Be acceptor to the first three excited odd parity states 2p 3/2 (Γ - 8), 2p 5/2 (Γ - 8) and 2p 5/2 (Γ - 7), respectively throngh comparison with theoretical calculation. The transition from the ground state 1s 3/2 (Γ + 8) to the excited state 2p 1/2 (Γ - 6) was also observed. According to the PTIS, the binding energy of Be acceptor in GaAs was deduced to be 28.6meV.

关 键 词：浅杂质 受主 光热电离光谱 砷化镓 半导体 铍 

分 类 号：TN304.23[电子电信—物理电子学]