p^+-ZnSe:N单晶薄膜的MBE生长与特性研究  

MBE GROWTH AND CHARACTERIZATION OF HEAVILY DOPED p^+-ZnSe∶N EPILAYERS

作　　者：王善忠[1] 谢绳武[1] 庞乾骏[1] 姬荣斌[2] 巫艳[2] 何力[2] 

机构地区：[1]上海交通大学应用物理系,光电材料与光电器件实验室,电子工程系,区域光纤网与新型光通信系统国家实验室,上海200030 [2]中国科学院上海技术物理研究所,半导体薄膜材料研究中心,红外物理国家实验室,上海200083

出　　处：《红外与毫米波学报》2000年第5期397-400,共4页Journal of Infrared and Millimeter Waves

摘　　要：研制了石英质射频激励等离子体活性氮源 ,将此氮源安装到国产 FW- 型分子束外延设备上 ,成功地生长了 p型 Zn Se:N优质单晶薄膜 .SIMS测量表明 ,薄膜中氮浓度高达～ 1.5× 10 2 0 cm- 3;PL 测量表明 ,氮在 Zn Se中形成了受主能级 ;C- V测量表明 ,净空穴浓度 [Na]- [Nd]≈ 5× 10 1 7cm- 3,达到了制备原理性蓝绿色激光二极管的要求 (～ 4.0× 10 1 7cm- 3) .C- V测量的结果同时得到远红外光谱法测量数据的佐证 .A simplified plasma nitrogen source, of which the principal part is made of a quartz tube, was fabricated and mounted into the home made FW Ⅲ MBE machine as a p type dopant for the growth of p ZnSe∶N epilayers. The source was activated by means of radio frequency. Under the conditions given here, a series of high quality p type ZnSe crystal films were obtained. The SIMS results indicate that the nitrogen concentration in the ZnSe films is higher than^1.5×10 20 cm -3 ,and the C V measurements with evidence of data of FIR spectroscopy make it clear that the net hole concentration [N a]-[N d] is about 5×10 17 cm -3 . PL measurements show that nitrogen acceptor level is formed in ZnSe. Compared with the references, the ZnSe films with such a high hole concentration (4.0×10 17 cm -3 could be used to fabricate blue green laser diodes in principle.

关 键 词：氮掺杂源 单晶薄膜 硒化锌 半导体 

分 类 号：TN304.25[电子电信—物理电子学]