CCD纵向溢出漏结构工艺仿真与实现  

Simulation and Fabrication of Vertical Spillover Drain Structure of CCD

作　　者：雷仁方[1] 王晓强[1] 杨洪[1] 吕玉冰[1] 郑渝[1] 李利民[1] 

机构地区：[1]重庆光电技术研究所,重庆400060

出　　处：《半导体光电》2013年第5期775-777,共3页Semiconductor Optoelectronics

摘　　要：传统的电荷耦合器件(CCD)处于强光环境时,会产生光晕现象;纵向溢出漏结构的出现,满足了CCD在强光环境下的使用要求。通过对CCD的纵向溢出漏结构及其电势进行分析,发现抗晕势垒是纵向溢出漏结构能否实现抗晕功能的关键,决定了抗晕能力的强弱,而抗晕势垒受p阱注入剂量、埋沟注入剂量的影响。通过工艺仿真,确定了纵向溢出漏结构的p阱、埋沟工艺条件,根据仿真结果制造的纵向抗晕CCD抗晕能力大于100倍。Blooming occurs when conventional CCD operates under high-light imaging situations, but it can be significantly reduced by vertical overfow drain （VOD） structure. In this paper, analysis on the VOD structure and its potential indical：e that anti-blooming barrier is the main factor for the VOD structure to realize anti-blooming function and the height of anti- blooming barrier is determined by implant dose of p-well and buried channel charge-coupled device （BCCD）. And the process conditions are determined by simulations, and the anti-blooming capacity of the VOD CCD fabricated based on the simulation results exceeds 100 times.

关 键 词：CCD 抗晕能力 纵向溢出漏 仿真 

分 类 号：TN386.5[电子电信—物理电子学]