n-Si/p-CuI异质结的制备及其光电特性研究  

Fabrication and Characterization of p-CuI/n-Si Heterojunction Diodes

作　　者：熊超[1,2] 朱锡芳[1] 陈磊[1] 陆兴中[1] 袁洪春[1] 肖进[1] 丁丽华[1] 徐安成[1] 

机构地区：[1]常州工学院光电工程学院,江苏常州213002 [2]华南理工大学电子与信息学院,广州510641

出　　处：《半导体光电》2013年第5期787-790,803,共5页Semiconductor Optoelectronics

基　　金：国家自然科学基金项目(11247323);江苏省高校自然科学基金项目(12KJD510001);常州市科技项目(CJ20120001);常州工学院自然科学基金项目(YN1105)

摘　　要：采用成本低廉的连续离子层沉积法通过在n型Si衬底上沉积γ相的多晶结构的CuI薄膜而制备了CuI/n-Si异质结。并通过测试其光照下的I-V、C-V特性对其光电特性、载流子输运特性及导电机理进行了研究。研究表明CuI/n-Si异质结存在良好的整流特性,由于在CuI/nSi异质结界面处的导带补偿与价带补偿相差较大,在正向电压、无光照下,导电机理为空间电荷限制电流导电,此时空穴电流主导;在光照下,异质结表现出良好的光电响应,因此可以广泛应用在光电探测和太阳电池等领域。Polycrystalline T-CuI films were deposited on n-Si substrate with the method of low-cost successive ionic layer adsorption. Then p-CuI/n-Si heterojunction diodes were prepared with the prepared films. The optical-electrical characteristics, carrier transportation properties and conductive mechanism were studied based on analyzing its I-V and C-V characteristics under illumination. It is shown that the p-CuI/n-Si heteroju3ction shows good rectification characteristic. As the big difference between conduction band c ffset and the valence band offset at the interface of heterojunction, the conductive mechanism is the space-charge limited current （SCLC） conduction at forward bias voltage with no illumination, and it is dominated by the hole current. While under illumination, the heterojunction diodes ：;how good photoelectric response, which makes it suitable for photodetection, photovoltaic devices and other fields.

关 键 词：p-CuI/n-Si异质结 I-V特性 C-V特性 内建电势 界面态 

分 类 号：TN304[电子电信—物理电子学]