浅谈MOSFET产品失效分析及改善措施  

Failure Analysis and Improvement Measures of MOSFET Products

作　　者：王立国[1] 周莹[1] 

机构地区：[1]天水华天科技股份有限公司,甘肃天水741000

出　　处：《电子工业专用设备》2013年第11期26-28,49,共4页Equipment for Electronic Products Manufacturing

摘　　要：阐述了MOSFET产品的应用前景,说明了其封装工艺流程及注意事项,通过对MOSFET电路常见失效现象的分析验证,探讨MOSFET产品的失效机理及其影响,对相应的失效现象制定合理的失效分析方案,确保有效查找失效的具体原因,并对失效原因从设计、工艺和材料选用等方面提出改善措施。This paper mainly describes the application prospect of MOSFET products, the packaging process and the matters needing attention, through the analysis and verification of MOSFET circuit common failure phenomenon, explore the failure mechanism and effect of MOSFET products, reasonable failure analysis plan for failure phenomenon corresponding, to ensure that the specific reasons for failure effectively, and the failure from design, material selection process and put forward improving measures.

关 键 词：场效应管 失效分析 改善措施 

分 类 号：TN406[电子电信—微电子学与固体电子学]