电化学制备新型氧化液在铜CMP中的应用  

Application of the Electrochemical Preparation of a New Oxidation Solution in the Copper CMP

作　　者：甄加丽 檀柏梅[1] 高宝红[1] 郭倩[1] 赵云鹤[1] 

机构地区：[1]河北工业大学微电子研究所,天津300130

出　　处：《微纳电子技术》2013年第12期789-792,797,共5页Micronanoelectronic Technology

基　　金：国家中长期发展规划重大科技专项资助项目(2009ZX02308-003)

摘　　要：在铜化学机械抛光(CMP)中,双氧水易分解的不稳定性严重制约铜化学机械抛光速率。为了寻求一种稳定性好且氧化能力强的新型氧化液,采用电化学方法电解水基硫酸盐,得到了氧化性很强且稳定的过氧焦硫酸盐氧化液。采用自制的氧化液配制抛光液进行铜CMP实验,分别改变氧化液、硅溶胶磨料和螯合剂的浓度,分析了各组分的作用,得到了抛光液的优化配比,获得了较高的去除速率和较低的表面粗糙度。抛光速率达889.44 nm/min,粗糙度达6.3 nm,满足工业应用要求。In the copper chemical mechanical polishing （CMP） process, the chemical mechanical polishing rate is seriously restricted by the instability of the hydrogen peroxide which is easy to decompose. To find a new stable and powerful oxidation solution, a kind of peroxydisulfate oxidation solution with powerful oxidizing property and stability was obtained by electrolyzing the water base sulfate. The copper CMP experiments were accomplished with the slurry contained of the oxidation solution. Through changing the concentration of the oxidation solution, colloidal silica abrasive and chelate agent respectively, and analyzing the function of each composition, the optimized ratio of the slurry, a higher removal rate and lower surface roughness were achieved. The removal rate and surface roughness meet the requirement of industrial applications, which reach 889.44 nm/min and 6.3 nm, respectively.

关 键 词：电化学 铜化学机械抛光(CMP) 双氧水 过氧焦硫酸盐 去除速率 

分 类 号：TG175[金属学及工艺—金属表面处理]