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作 者:杨昊鹍[1] 刘玉岭[1] 王辰伟[1] 张宏远[1] 洪姣[1] 孙铭斌
出 处:《微纳电子技术》2013年第12期798-802,共5页Micronanoelectronic Technology
基 金:国家中长期科技发展规划02科技重大专项资助项目(2009ZX02308)
摘 要:为有效去除铜片表面难溶的、具有复杂结构的铜-BTA,主要对铜片清洗过程中起关键作用的清洗液的组分和浓度进行了研究。采用自主研发的FA/O II型螯合剂作为清洗液,反复进行了大量实验。结果表明,当FA/O II型螯合剂体积分数为7.5%,清洗液pH值为10.05时,能有效去除铜-BTA和表面的其他颗粒物,接触角可降到28.5°,同时该清洗液不会在表面沾留和造成腐蚀,表面粗糙度可降到3.52 nm。此外,通过红外测试铜-BTA所在的波段,利用电化学工作站验证了铜-BTA膜的存在,并进一步验证了实验结果。通过与KOH配制的相同pH值的清洗液进行对比,接触角和表面粗糙度均无较大变化,从而确定FA/O II型螯合剂对铜-BTA的去除起主要作用。To effectively remove the Cu-BTA with a complex structure and insoluble surface, the key function of the cleaning solution composition and concentration were investigated. Using the self-made FA/O II chelating agent as the cleaning solution, the experiments were repeatedly carried out. And the results show that when the volume fraction of the FA/O II chelating agent is 7.5% and the pH value of the cleaning solution is I0.05, Cu-BTA and other particles on the surface can be effectively removed, and the contact angle can be dropped to 28.5°. Meanwhile, the cleaning solution will not touch the surface and cause the corrosion, and the surface roughness can be dropped to 3.52 nm. Besides that, through the infrared test of the wave band for Cu-BTA and with the electrochemical workstation, the presence of Cu-BTA membrane was verified, which further verified the experimental results. Compared with the prepared KOH cleaning solution of the same pH value, the contact angle and surface roughness have no obvious change, which indicates that the FA/O II chelating agent plays a major role in the removal of Cu-BTA.
分 类 号:TN305.2[电子电信—物理电子学]
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