金属氧化物TFT驱动AMOLED显示研究进展  

Research progress of active matrix organic light emitting diode (AMOLED) displays driven by metal oxide thin film transistors (TFT)

作　　者：王磊 徐苗[1,2,3] 兰林锋 邹建华[1,2,3] 陶洪 徐华[1,2] 李民 罗东向[1,2] 彭俊彪 

机构地区：[1]发光材料与器件国家重点实验室 [2]华南理工大学高分子光电材料与器件研究所,广州510640 [3]广州新视界光电科技有限公司,广州510730

出　　处：《中国科学：化学》2013年第11期1383-1397,共15页SCIENTIA SINICA Chimica

基　　金：国家自然科学基金(61306099);中央高校基本科研业务费(2012ZM0003);广东省优博基金(SYBZZXM201113);广东省教育部产学研结合(2011A090200109)项目资助

摘　　要：金属氧化物薄膜晶体管（metal oxide thin film transistor，MOTFT）由于具有迁移率高、均匀性好、工艺简单、工艺温度低、成本低等优势，非常适合高分辨率、大尺寸液晶显示（LCD）和有源矩阵有机发光二极管显示（AMOLED）等新型显示技术发展的需要，因此受到业界和学界的广泛关注．结合本课题组的工作，本文阐述了MOTFT的材料、器件结构、制作工艺以及应用，并对影响MOTFT性能的因素进行了讨论．本课题组开发的新型MOTFT迁移率可达35cm^2／（Vs），阈值电压为1．63V，开关比为10^9，亚阈值摆幅为0．21Wdecade．基于自主开发的MOTFT背板，在国内率先实现了3—5英寸彩色AMOLED显示屏、透明AMOLED显示屏以及柔性AMOLED显示屏，展示了MOTFT背板良好的应用前景．Metal oxide thin film transistors （MOTFTs） have been attracting great attention, because TFT technology are suitable for the requirement of novel display technology such as high definition, large screen liquid crystal display （LCD） and active matrix organic light emitting diode （AMOLED） display, with their high mobility, good uniformity, simple process, low process temperature, and low cost. In this article, material, device structure, fabricating process and application of MOTFT are introduced, and factors that influence MOTFT performance have been discussed. We developed a new class of metal oxide materials, which has a highest mobility of 35 cm2/Vs, threshold voltage of 1.63 V, current on/off ratio of 109, and sub threshold swing of 0.21 V/decade. Based on our MOTFT panel, we have developed a first 3~5 inch color AMOLED screen, transparent AMOLED, and flexible AMOLED. This novel MOTFT panel has a booming future in novel display such as TFT-LCD and AMOLED.

关 键 词：金属氧化物 氧化物半导体 薄膜晶体管 有机发光二极管 主动矩阵 柔性显示屏 

分 类 号：TN141[电子电信—物理电子学]