离子刻蚀工艺表面演化仿真的三维元胞模型  

Three-dimensional cellular model for profile simulation of ion etching process

作　　者：郑树琳[1] 宋亦旭[1] 孙晓民[1] 

机构地区：[1]清华大学计算机科学与技术系,智能技术与系统国家重点实验室,北京100084

出　　处：《高技术通讯》2013年第11期1206-1212,共7页Chinese High Technology Letters

基　　金：国家科技重大专项(2011ZX2403-002)资助项目

摘　　要：为了更好地理解和认识刻蚀机理,并为制造工艺提供优化指导,采用三维元胞模型研究了离子刻蚀工艺的表面演化过程。针对三维元胞模型内存使用量大,采用了静态数组和动态双向链表相结合的方式进行信息存储;提出了边界时间最短优先移动法,改进了刻蚀离子入射轨迹计算量大的问题;通过一种降维分量拟合方法实现了刻蚀离子入射角度的快速求解,并重点对用于拟合计算的表面元胞的选取方法进行了改进,提出了滚轮搜索法,提高了拟合的准确度。将该模型应用到硅刻蚀工艺三维仿真中,其模拟结果与相关实验结果对比,验证了该模型对刻蚀工艺描述的有效性。The surface evolution of ion etching processes was investigated by using a 3D cellular model to get a better un derstanding of etching mechanisms and provide optimization guidance for MEMS manufacturing. A method of combi ning static arrays and bidirectional linked lists was applied to storing the information of the 3D cellular model and reducing the memory usage. The method of ＂the shortest reach time to boundary of cellular for first move＂, was pro posed to reduce the calculation for the incident trajectories of many ions. And the component fittingbased dimension reduction method was introduced to fast gain the ion incident angle. A rolling search algorithm was emphatically presented to improve the accuracy of fitting, which is an improved surface cellular selection method for fitting. The cellular model was applied to the 3D simulation of a silicon etching process, and the simulation results verified the validity of the simulated surface compared with relevant experimental results.

关 键 词：离子刻蚀 三维元胞模型 边界时间最短优先移动法 滚轮搜索法 

分 类 号：TN305.7[电子电信—物理电子学]