新型相变材料Ti_(0.5)Sb_2Te_3刻蚀工艺及其机理研究  

Study on Etching Process and Mechanism of New Phase Change Material Ti_(0.5)Sb_2Te_3

作　　者：张徐[1,2] 刘波[1] 宋三年[1] 姚栋宁 朱敏[1,2] 饶峰[1] 吴良才[1] 宋志棠[1] 封松林[1] 

机构地区：[1]中国科学院上海微系统与信息技术研究所,信息功能材料国家重点实验室,上海200050 [2]中国科学院大学,北京100083

出　　处：《无机材料学报》2013年第12期1364-1368,共5页Journal of Inorganic Materials

基　　金：国家重点基础研究发展计划(2010CB934300;2011CBA00607);国家自然科学基金(61006087;61076121;61076122;61106001);上海市科委(12nm0503701)~~

摘　　要：采用CF4和Ar混合气体研究了新型相变材料Ti0.5Sb2Te3(TST)的刻蚀特性,重点优化和研究了刻蚀气体总流速、CF4/Ar的比例、压力和功率等工艺参数对刻蚀形貌的影响。结果表明,当气体总流量为50 sccm、CF4浓度为26%﹑刻蚀功率为400 W和刻蚀压力为13.3 Pa时,刻蚀速度达到126 nm/min,TST薄膜刻蚀图形侧壁平整而且垂直度好(接近90°)﹑刻蚀表面平整(RMS为0.82 nm)以及刻蚀的片内均匀性等都非常好。The dry etching characteristic of new Ti0.sSbzTe3 （TST） phase change material was investigated by using the CF4 and Ar gas mixture. The research mainly focuses on how to optimize the experimental parameters such as gas flow rate within the chamber, CFa/Ar flow ratio, the chamber background pressure and the incident RF power applied to the lower electrode. The results show that CF4 mainly plays a role of chemical etching and Ar plays a role of physical bombardment. The etching rate of TST films increases with the increasing concentration of CF4 in the gas mixture. The etching chamber pressure has less effect on the TST film etching speed, while the etching power has larger effect. The etch rate is up to 126 nm/min with the smooth etched surface （RMS=0.82 nm） and TST film profile is almost vertical （approaching 90 using optimized etching parameters, including the total flow rate of 50 sccm, CF4 concentration of 26%, power of 400 W and pressure of 13.3 Pa.

关 键 词：新型相变材料 干法刻蚀 CF4+Ar气体 刻蚀速度 

分 类 号：TQ174[化学工程—陶瓷工业]