近红外激光退火晶化CIGS薄膜研究  

Study on the structure of crystallized CIGS thin films by near infrared laser annealing

作　　者：胡居广[1] 汤华斌[1] 李启文[1] 李学金[1,2] 郑彬[1] 刘毅[1] 龙井华[1] 林晓东[1] 

机构地区：[1]深圳大学物理科学与技术学院,深圳518060 [2]深圳市传感器技术重点实验室,深圳518060

出　　处：《深圳大学学报（理工版）》2013年第6期623-628,共6页Journal of Shenzhen University(Science and Engineering)

基　　金：国家自然科学基金资助项目(61275125);深圳市基础研究计划资助项目(JCYJ20120613112423982)~~

摘　　要：利用脉冲激光沉积法在石英基底上沉积铜铟镓硒薄膜为前驱物,采用波长1 064 nm的近红外脉冲激光在不同能量密度下对其进行退火晶化.对薄膜的光学特性、晶体结构和形貌等进行表征分析,结果表明,随着激光能量密度增加,铜铟镓硒薄膜结晶度增加,晶粒尺寸变大,压应力减小,禁带宽度增加.当激光能量密度为325 mJ/cm2时,薄膜的结晶度达最高值29.46%,晶粒尺寸达最大为15.4 nm,压应力最小,薄膜结晶质量最好,过低和过高的能量密度都不利于薄膜的结晶.同时分析了高能量密度时薄膜表面条纹的形成机理.CuIn1-xGaxSe2 （CIGS） films were deposited on quartz substrate by pulsed laser deposition as precursors and annealed by the 1 064 nm near infrared pulse laser at different energy density. The optical properties, micro- structures, surface morphology were characterized with spectrophotometer, X-ray diffractometry （ XRD）, scanning e- lectron microscopy （SEM） respectively. The results show that with the laser energy density increasing, the crystal- linity of CIGS films increases; grain size becomes larger; compressive stress decreases ; band-gap increases. When the laser energy density reaches 325 mJ/cm2, the crystallinity of films rises up to 29.46% ; the grain size reaches the maximum 15.4 nm; the compressive stress is minimum. The crystallization quality is the best, and the crystallin- ity of film is bad at lower or higher energy density. In addition, the formation mechanism of stripes on film surface annealed at high energy density was analyzed.

关 键 词：薄膜物理 激光退火 铜铟镓硒薄膜 能量密度 结晶 压应力 表面条纹 

分 类 号：TM914.42[电气工程—电力电子与电力传动] TB43[一般工业技术]