腐蚀参数对SiC单晶材料位错腐蚀效果的影响  

Effects of etching parameters on dislocation etching morphology of SiC single-crystal materials

作　　者：苗瑞霞[1] 

机构地区：[1]西安邮电大学电子工程学院微电子系,西安710121

出　　处：《科技创新导报》2013年第25期87-89,共3页Science and Technology Innovation Herald

基　　金：国家自然科学基金(No.51302215);陕西省教育厅科研基金(No.11JK0916)~~

摘　　要：湿法腐蚀是缺陷表征的主要方法,腐蚀效果取决于腐蚀剂和腐蚀时间。然而碳化硅具有很强的化学稳定性,普通的腐蚀剂难以对SiC造成腐蚀,熔融的KOH可以很好地进行选择性腐蚀,因此位错选择性腐蚀的效果不仅受腐蚀时间的影响,还受腐蚀温度的影响。该文采用KOH作为腐蚀剂,通过改变腐蚀温度和时间研究腐蚀参数对SiC单晶材料中位错选择性腐蚀形貌的影响。结果表明,在温度为440°C和500°C时,改变腐蚀时间对位错选择性腐蚀形貌影响并不明显;而在腐蚀温度为470°C下,腐蚀形貌随时间变化出现三种不同特点,即10 min时欠腐蚀,20 min时过腐蚀,15 min时,可以得到理想的位错腐蚀形貌。Wet etching process is the main defect characterization methods.The etching effect depends on the etchant and etching time.SiC is difficult to be etching by ordinary etchant because of the strong chemical bond,but it is easy be etched with the molten KOH,so the effect of etching is related to not only etching time,but also etching temperature.In this paper,effects of etching parameters on dislocation etching morphology of SiC single--crystal materials are presented.The result shows that the effect is not obvious by changing etching time from 10 min to 20 min at 440℃ and 500℃respectively, but is obvious at 470℃ At 470℃,the etching morphology have three different characteristics,they are under etching （10min）,ideal etching （15min） and over etching （20 min）.

关 键 词：SIC 腐蚀 位错 缺陷表征 

分 类 号：TN304[电子电信—物理电子学]