中频磁控溅射制备a-C∶H(Al,W)薄膜及其性能研究  

The Properties of a-C∶ H( Al,W) Films Prepared by Medium Frequency Magnetron Sputtering

作　　者：龚秋雨[1,2] 郝俊英[1] 刘小强[1,2] 刘维民[1] 

机构地区：[1]中国科学院兰州化学物理研究所固体润滑国家重点实验室,甘肃兰州730000 [2]中国科学院大学,北京100049

出　　处：《摩擦学学报》2013年第6期556-564,共9页Tribology

基　　金：国家自然科学基金(51375471);国家973计划项目(2013CB632301)资助~~

摘　　要：采用中频磁控溅射技术，以w、Al复合靶（面积比为1：1）为靶材，在氩气和甲烷混合气体中于iq（100）型单晶硅表面沉积了一系列Al、w共掺杂含氢非晶碳[a-c：H（Al，w）]薄膜．分析了不同甲烷流量对薄膜成分、结构和表面形貌的影响，并表征了薄膜的力学性能和摩擦磨损行为．结果表明：随着甲烷流量的增加，薄膜中C含量呈上升趋势，而w和Al含量均呈现递减趋势，过高流量的CH。会导致金属靶材中毒．薄膜中的sp^2C和sp^3c含量受w、Al以及H注入效应的共同影响．所制备的薄膜表面均较为平滑，表面粗糙度（RMS）在0．39～0．48nm范围内．薄膜的纳米硬度（日）在9．98-11．37GPa之间，弹性模量（E）介于71～93．36GPa之间，弹性恢复系数均在70％以上．当薄膜中w和Al的原子百分含量分别为3．74％和2．37％时，H／E值和H^3／E^3值分别为0．141和0．198，且此时薄膜在大气环境下表现出较好的减摩抗磨性能．薄膜具有适度的sp^3C／sp^2c比值、优异的弹性形变性能、摩擦过程中对偶球表面形成连续而致密的转移层等因素是薄膜具有良好摩擦学性能的重要原因．A series of W and A1 co - doped hydrogenated amorphous carbon flms （ a - C： H （ A1, W） films） were deposited on n （100） Si substrates by medium frequency magnetron sputtering W - AI composite target （ area ratio 1： 1 ） in argon and methane gas mixture atmosphere. The effect of CH4 flow rate on the composition, structure and surface morphology of films were analyzed, and the mechanical and tribological properties of films were also characterized. The results demonstrate that with the increase of CH4 flow rate, the contents of carbon of fihns increased while the contents of W and A1 decreased gradually, and the metallic target could be poisoned due to the overhigh CH4 flow rate. The contents of sp2 C and sp3 C could be controlled by the W, A1 and H implantation. The surfaces of all films were rather smooth, with the Root Mean Square surface roughness between 0. 386 nm and 0. 480 nm. The nano - hardness （H） and elastic modulus （E）of films were between 9.98 GPa and 11.37 GPa, 71 GPa and 93.36 GPa, respectively. And all samples exhibited elastic recovery rate higher than 70%. The film containing 3.74% of W and 2.37% of A1 showed favorable antifriction and wear - resistant properties in ambient air with a HIE ratio of 0. 141 and a H3/E2 ratio of 0. 198. The good tribological property of film can be attributed to moderate ratio of sp3 C/sp2 C, excellent elastic deformation property and the transfer layer on counter body.

关 键 词：中频磁控溅射 A-C H(A1 W)薄膜 摩擦磨损 力学性能 

分 类 号：TG135[一般工业技术—材料科学与工程]