用于HIT太阳能电池的非晶硅薄膜制备与性能研究  

Study on Preparation and Properties of a-Si∶ H Thin Films for HIT Solar Cells

作　　者：齐晓光[1] 雷青松 杨瑞霞[1] 薛俊明 柳建平[1] 

机构地区：[1]河北工业大学信息工程学院,天津300401 [2]河北汉盛光电科技有限公司,衡水053000

出　　处：《人工晶体学报》2013年第11期2230-2234,共5页Journal of Synthetic Crystals

摘　　要：采用射频等离子体增强化学气相沉积技术(RF-PECVD),在不同硅烷浓度下制备本征非晶硅薄膜,研究薄膜材料的微结构和光电性能。研究表明,在硅烷浓度为5%时,制备的薄膜材料处于非晶/微晶相过渡区域,具有宽光学带隙、低吸收系数、较高电导率和较好的致密性。作为钝化层应用到HIT太阳电池中,具有良好的钝化效果,在n型单晶硅衬底上制备出了效率为13.92%的太阳电池。The a-Si： H thin films were prepared by RF plasma enhanced chemical vapor deposition at different silane concentrations, and the microstructure and photoelectric properties of the films were studied. The results implied that transition from the amorphous phase to the microcrystalline phase could be observed at silane concentration of 5%, and the thin film material have wide optical bandgap, low optical absorption coefficient, high conductivity and good microstructure. This material with good passivation was used in HIT （heterojunction with intrinsic thin layer） solar cells. The a-Si： H solar cells with conversion efficiency of 13.92% on n-type Si wafer was achieved.

关 键 词：iRF-PECVD 非晶硅薄膜 硅烷浓度 HIT太阳电池 

分 类 号：O484.4[理学—固体物理]