热光伏系统中ITO薄膜滤波器的设计与制备  

Design and Preparation of ITO Film Filter Used in Thermal Photovoltaic System

作　　者：杨惠尹[1] 陈雪[1] 钱子勍[1] 

机构地区：[1]上海空间电源研究所,上海200245

出　　处：《光学学报》2013年第12期349-352,共4页Acta Optica Sinica

摘　　要：氧化铟锡(ITO)半导体薄膜为典型的宽禁带半导体材料,具有短波高透射、长波高反射以及超宽的反射带等特性,满足热光伏(TPV)系统对滤波器的要求。以载流子浓度N和迁移率μ以及膜层厚度d为参数,对ITO薄膜的光学性质进行了仿真,给出了在不同参数下滤波器的光谱曲线。通过磁控溅射薄膜沉积系统制备了ITO薄膜,对退火处理后的滤波器进行了光学性能测试,最终得到可用于热光伏系统的ITO薄膜滤波器。制备的与GaSb电池匹配的滤波器截止波长为2μm,短波平均透射率接近70%,长波平均反射率接近70%,而且超宽的长波反射带延伸至10μm,可大大提高TPV系统的效率。Indium tin oxide （ITO） semiconductor film is a typical wide bandgap semiconductor material. It owns much peculiarity, such as higher transmissivity in the short wavelength, higher reflectivity in the long wavelength, and super-wide reflection band, which meet the requirement of thermal photovoltaic （TPV） system. The optical properties of ITO film are calculated with the parameters of carrier concentration, mobility and thickness. The spectral curves of filters are given according to different parameters. The ITO film is prepared by using magnetron sputtering deposition technology. The optical properties of filters are given, and the ITO filter used in TPV system is prepared after anneal. The cut off wavelength of prepared filter matching with GaSb cell is 2 μm, the average transmissivity of short-wave band approaches 70%, the average reflectivity of long-wave band approaches 70%, and the ultra-wide reflection band extends to 10 μm, which can improve the efficiency of TPV system greatly.

关 键 词：薄膜 半导体薄膜 薄膜滤波器 磁控溅射 退火 热光伏系统 

分 类 号：O432.1[机械工程—光学工程]