B和H离子顺次注入单晶Si引起的缺陷及其热演变（英文）  

Thermal Evolution of Defects in Crystalline Silicon by Sequential Implantation of B and H Ions

作　　者：张蓓[1] 张鹏[2] 王军[1] 朱飞[1] 曹兴忠[2] 王宝义[2] 刘昌龙[1,3] 

机构地区：[1]天津大学理学院物理系,天津300072 [2]中国科学院高能物理研究所核分析技术重点实验室,北京100049 [3]天津市低维功能材料物理与制备技术重点实验室,天津300072

出　　处：《原子核物理评论》2013年第4期471-476,共6页Nuclear Physics Review

基　　金：National Natural Science Foundation of China(10975107)~~

摘　　要：室温下将130 keV,5×1014cm 2B离子和55 keV,1×1016cm 2H离子单独或顺次注入到单晶Si中,采用横截面试样透射电子显微镜(XTEM)和慢正电子湮没技术(SPAT)研究了离子注入引起的微观缺陷的产生及其热演变。XTEM观测结果显示,B和H离子顺次注入到单晶Si可有效减少(111)取向的H板层缺陷,并促进了(100)取向的H板层缺陷的择优生长。SPAT观测结果显示,在顺次注入的样品中,B离子平均射程处保留了大量的空位型缺陷。以上结果表明,B离子本身及B离子注入所产生的空位型缺陷对板层缺陷的生长起到了促进作用。Cz n-type Si （100） wafers were singly or sequentially implanted at room temperature with 130 keV B ions at a fluence of 5 x 1014 cm-2 and 55 keV H ions at a fluence of i x 1016 cm-2. The implantation-induced defects were investigated in detail by using cross-sectional transmission electron microscopy （XTEM） and slow positron annihilation technique （SPAT）. XTEM results clearly show that sequential implantation of B and H ions into Si could eliminate the （111） platelets and promote growth of （100） platelets during annealing. SPAT measurements demonstrate that in B and H sequentially implanted and annealed Si, more vacancy-type defects could remain in sample region around the range of B ions. These results indicate that the promotion effect should be attributed to the role of both B and B implanted induced vacancy-type defects.

关 键 词：单晶Si B和H离子注入 H板层缺陷 XTEM SPAT 

分 类 号：O483[理学—固体物理]