热载流子注入效应的可靠性评价技术研究  

Study on HCI Effect Reliability Evaluation Technology

作　　者：章晓文[1] 陈鹏 恩云飞[1] 张晓雯 

机构地区：[1]工业和信息化部电子第五研究所电子元器件可靠性物理及其应用技术重点实验室,广州510640 [2]国防科技信息中心,北京100010

出　　处：《微电子学》2013年第6期876-880,共5页Microelectronics

摘　　要：研究了热载流子注入效应的可靠性评价方法,利用对数正态拟合的中位失效时间,提取加速寿命试验的模型参数。利用这些模型参数,分别评价了0.18μm CMOS工艺薄栅和厚栅器件的可靠性。结果表明,HCI效应仍然制约着0.18μm CMOS工艺的可靠性水平。鉴于热载流子注入效应仍对深亚微米CMOS工艺的可靠性构成威胁,因此,要使产品的使用可靠性得到保证,必须对工艺线失效机理的可靠性进行有效的监测和评价,以保证生产出的产品满足使用方的要求。Method for evaluating reliability of hot carrier injection （HCI） effect was studied. Model parameters of accelerated lifetime experiment were extracted using the mean time to failure of lognormal distribution. With these model parameters, reliability of thin-gate and thick-gate devices in 0. 18 μm CMOS process were evaluated, respectively. Experimental results showed that HCI effect restricted the reliability of 0. 18 μm CMOS process. Since HCI effect, which is one of the main failure mechanisms for VLSI/ULSI, still affects the reliability of deep sub micrometer CMOS process, it is necessary to monitor and evaluate the reliability of failure mechanism in CMOS process, to ensure that the reliability of products manufactured satisfy application requirements of the customer.

关 键 词：CMOS工艺 加速寿命试验 热载流子注入效应 可靠性评价 

分 类 号：TN406[电子电信—微电子学与固体电子学]