磁控溅射参数及基片材料对铜薄膜结合强度的影响  

Effect of Process Parameters and Substrate Materials on Adhesion Strength of Magnetron Sputtered Copper Film

作　　者：陈瑞芳[1] 倪泽炎 花银群[1,2] 薛青[1] 

机构地区：[1]江苏大学机械工程学院,江苏镇江212013 [2]江苏大学材料科学与工程学院,江苏镇江212013

出　　处：《热加工工艺》2013年第24期66-69,72,共5页Hot Working Technology

基　　金：国家自然科学基金资助项目(51175234);江苏省"六大人才高峰"项目资助(2010-JXQC069);江苏省高校自然科学研究资助项目(11KJB430002);江苏大学高级人才基金资助项目(10JDG061)

摘　　要：采用不同的溅射工艺参数及基片材料制备了铜薄膜,用划痕法测试了薄膜结合强度,研究了溅射功率、溅射气压、溅射时间、基片温度及基片材料对铜薄膜结合强度的影响。结果表明,在功率85W,溅射气压1.5 Pa,时间30 min,基片温度150℃的条件下,薄膜结合强度为26.9 N。与硅片相比,玻璃表面的铜薄膜具有更高的结合强度。Copper film was prepared using different substrate materials and magnetron sputter parameters.The effects of sputtering power,air pressure,sputtering time,substrate temperature and substrate materials on the adhesion strength of Cu film were studied by scratch test.The results show that adhesion strength reaches 26.9 N under the power 85 W,air pressure 1.5 Pa,sputtering time 30 min and temperature 150 ℃.Compared with silicon,Cu film on glass substrate has higher adhesion strength.

关 键 词：结合强度 铜薄膜 直流磁控溅射 

分 类 号：TG156.99[金属学及工艺—热处理] TN249[金属学及工艺—金属学]