紫外光电探测器研制  

The Study on Ultraviolet EO Detector

作　　者：吴会利[1] 刘剑[1] 申猛[1] 

机构地区：[1]中国电子科技集团公司第四十七研究所,沈阳110032

出　　处：《微处理机》2013年第6期18-19,共2页Microprocessors

摘　　要：采用宽带隙半导体材料SiC,进行紫外光电探测器的制备。基于机械性能和化学稳定性考虑,增透抗反膜的制备采用SiO2+Al2O3工艺,同时对其表面钝化层和增透抗反膜工艺进行了研究讨论。This paper describes the preparation of the ultraviolet EO detector by using a wide band gap semiconductor material （Silicon carbide）. Concerning about the mechanical properties and chemical stability, the technical process of SiO2＋Al2O3is used for preparation of AR antireflection coating, and the Dassivation laver and the process of anti - reflection antireflection coatinz on the detector are discussed.

关 键 词：碳化硅 光电探测器 宽带隙 抗反射 

分 类 号：TN4[电子电信—微电子学与固体电子学]