基于电感并联峰化的宽带CMOS跨阻前置放大器  

CMOS Transimpedance Pre-amplifier Based on Inductive-Shunt Peaking Technique

作　　者：王巍[1] 武逶[1] 冯其[1] 王川[1] 唐政维[1] 王振[1] 袁军[1] 

机构地区：[1]重庆邮电大学光电工程学院,重庆400065

出　　处：《半导体光电》2013年第6期920-923,929,共5页Semiconductor Optoelectronics

摘　　要：提出了一种基于TSMC0.18μm CMOS工艺的低噪声、低功耗的10Gb/s光通信接收机跨阻前置放大器(TIA)的设计。该TIA电路采用具有低输入阻抗的RGC(regulated cascode)结构作为输入级。同时,采用电感并联峰化和容性退化技术扩展TIA电路的带宽。当光电二极管电容为250fF时,该电路的-3dB带宽为9.2GHz,跨阻增益为57.6dBΩ,平均等效输入噪声电流谱密度约为16.5pA/(Hz)(1/2)(0～10GHz),电路的群时延为±20ps。在1.8V单电源供电时,功耗为26mV。A design of low-power and wideband transimpedance pre-amplifer（TIA）was implemented in TSMC 0.18μm CMOS process for 10Gb/s high-speed optical communications.The TIA circuit exploits the regulated cascade（RGC）configuration with low input resistance as the input stage,meanwhile the inductive-shunt peaking and capacitive degeneration techniques were introduced to make bandwidth enhancement.Experimental results show that the proposed CMOS TIA circuit which accommodates a photodiode capacitor of 250fF,shows a-3dB bandwidth of 9.2GHz and transimpedance gain of 57.6dBΩ.The noise simulation shows the average input-referred noise current spectral density is 16.5pA/（Hz）（1/2） and the group delay is±20 ps.The power dissipation of the chip is 26mW under single 1.8V power supply.

关 键 词：跨阻放大器 CMOS 并联电感峰化 容性退化 调节型共源共栅 

分 类 号：TN722[电子电信—电路与系统]