一种大功率低偏振度量子阱超辐射发光二极管  

Quantum Well Superluminescent Diodes with High Power and Low Polarization Degree

作　　者：刘科[1] 宋爱民[2] 田坤[3] 廖柯[3] 

机构地区：[1]重庆邮电大学光电工程学院,重庆400065 [2]重庆第二师范学院,重庆400067 [3]重庆光电技术研究所重庆400060

出　　处：《半导体光电》2013年第6期949-953,共5页Semiconductor Optoelectronics

摘　　要：设计了一种张应变与压应变相结合的混合应变量子阱结构超辐射发光二极管,研究了TE模和TM模在器件中的模式增益,分析了影响增益偏振性的因素,在此基础上通过改变有源层量子阱的应变类型、应变量以及层数来达到高增益和偏振不敏感性。最后按设计工艺流程生长了芯片,实验结果表明,所设计的SLD芯片单管输出功率在100mA驱动电流下可达3.5mW,出射光谱FWHM约为40nm,20nm波长范围内偏振度为0.3dB,具有较理想的大功率、宽光谱、低偏振度特性。A mixed strained quantum well superluminescent diode integrating tensile strain with compressive strain was designed,TE and TM modes gain in the device were studied,and the factors contributing to gain polarization were analyzed.And then,high gain and polarization insensitivity were achieved by changing the strain types,variables and layer number of the active layer quantum well.Finally experiments were carried out on the diodes grown by Metal Organic Chemical Vapor Deposition（MOCVD）,results showed that the single-tube output power of the designed SLD chips can be up to 3.5mW at 100mA driving current,FWHM is about 40nm,the polarization degree in 20nm wavelength rang is less than 0.3dB and the chips own properties of ideal high power,wide spectrum and low polarization degree.

关 键 词：超辐射发光二极管 混合应变量子阱 低偏振度 

分 类 号：TN312.8[电子电信—物理电子学]