SnO_2纳米线的制备及结构表征  

Preparation and structure characterization of SnO_2 nanowires

作　　者：方香[1] 李玉国[1] 王宇[1] 刘永峰[1] 

机构地区：[1]山东师范大学物理与电子科学学院,山东济南250014

出　　处：《山东科学》2013年第6期14-18,共5页Shandong Science

摘　　要：以SnO2粉末和碳粉的混合物为源,高纯氮气为载气,利用化学气相沉积法在1 000℃下,在溅有Au的单晶Si衬底上制备了SnO2纳米线。用SEM、XRD测试技术对样品进行了结构、形貌的表征,利用PL技术分析了样品的发光特性。由分析可知,样品均为四方金红石结构,退火时间对样品形貌具有一定的影响,但不影响其结构。所制备的SnO2纳米线结晶质量较高,其生长遵循VLS机制。SnO2 nanowires were prepared on a single-crystal Au splashed Si substrate at 1 000℃ by CVD method with the mixture of SnO2 powder and toner as source material and high-purity N2 as carrier gas.We characterized its structure and morphology by SEM and XRD.We also analyzed its luminescence property by photoluminescence spectra.Results show that annealing time has certain influence on its morphology but does not affect its rutile structure.The prepared SnO2 nanowire has higher crystal quality and its growth follows VLS mechanism.

关 键 词：化学气相沉积 SnO2纳米线 生长机制 

分 类 号：O484.5[理学—固体物理]