基于GaN HEMT的S波段内匹配功率放大器设计  

Design of S-Band Internally Matching Power Amplifier Based on the GaN HEMT

作　　者：关统新 要志宏[1] 赵瑞华[1] 杨强[1] 刘荣军[1] 

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《半导体技术》2014年第1期38-41,77,共5页Semiconductor Technology

摘　　要：采用内匹配技术和平面功率合成相结合的设计方法,设计并实现了一款S波段功率放大器。在设计过程中,先通过预匹配电路将功率芯片的阻抗适当提高,进而利用Wilkinson功分器进行功率合成。该放大器基于中国电子科技集团公司第十三研究所自主研制的GaN HEMT管芯芯片。通过优化设计该放大器在25%的相对带宽、漏源电压28 V、脉宽8 ms和占空比50%的工作条件下,实现了输出峰值功率P out大于70 W,功率附加效率ηPAE大于54%,充分显示了GaN功率器件宽带、高效和高功率的工作性能,具有广阔的工程应用前景。A kind of S-band power amplifier was designed and realized by using the internally matching technique and planar power combining structure. During design process, pre-matching was used to increase the impedances of chips firstly, and Wilkinson power divider was then used to combine power. The power amplifier was based on the GaN HEMT, which is self-developed by the 13th Research Institute of China Electronic Technology Group Corporation. Through design optimization, under the conditions of 25% relative bandwidth, 28 V drain-source voltage, 8 ms pulse width and 50% duty cycle, the peak output power of the amplifier is greater than 70 W and the power added efficiency is more than 54%. Broadband, high efficiency and high-power performance of the GaN power device are fully demonstrated, and it has promising prospect in engineering application.

关 键 词：氮化镓 内匹配 宽带 高效率 功率放大器 

分 类 号：TN722.75[电子电信—电路与系统]