一种正电控制低温漂单片数控衰减器  

Positive Controlled MMIC Digital Attenuator with Low Temperature Drift

作　　者：韩玉鹏[1,2] 赵国庆[1] 赵瑞华[2] 王凯[2] 甄建宇[2,3] 

机构地区：[1]西安电子科技大学电子工程学院,西安710071 [2]中国电子科技集团公司第十三研究所,石家庄050051 [3]电子科技大学物理电子学院,成都610054

出　　处：《半导体技术》2014年第1期46-50,共5页Semiconductor Technology

摘　　要：数控衰减器在宽频带内具有高的衰减精度、优良的电压驻波比和大的衰减动态范围，因而得到了推广和应用。正电控制、低温漂6bit数控衰减器，各衰减位均采用具有低温漂特性的桥T型结构，并通过对衰减结构的合理构建，在不采用电平转换驱动器的情况下，成功实现正电控制，面积得到进一步缩小。对电路进行了仿真与优化，采用GaAs工艺技术完成了流片，测试结果表明，在2．4～8GHz频带内，参考态插入损耗小于4．0dB；衰减精度小于±1dB@31．5dB；回波损耗小于-15dB；衰减量在高温或低温时较常温时的偏差控制在0．3dB以内；各衰减位为0．5，1，2，4，8和16dB，最大衰减量为31．5dB。单片数控衰减器芯片最终尺寸为2．9mm×1．3mm，控制电压为0V和5V。As the advantages of high attenuation accuracy, excellent voltage standing wave ratio and a large dynamic range in a wide frequency band, the digital control attenuator is rapidly promoted and widely used. The structure of each attenuation bits of positive control, low temperature drift 6 bit digitally controlled attenuator is T-type bridge, which is insensitive to temperature change. By building reasonable attenuation structure, the attenuator was positive controlled without level conversion drive case. Meanwhile, the area of the attenuator was further reduced. The circuit was simulated and opti- mized, and the manufacture process was completed using GaAs technology. The test results show that from 2.4 GHz to 8 GHz frequency band, the insertion loss is less than 4.0 dB, the attenuation accuracy is less than ± 1 dB@ 31.5 dB, the return loss is less than -15 dB, the deviation of the attenuation value is less than 0.3 dB, when the temperature is higher or lower than the room temperature, the attenuation bit values are 0.5, 1 , 2, 4, 8 andl6 dB.and the maximum attenuator is 31.5 dB. The final dimension of the digital attenuator MMIC chip size is 2.9 mm×1. 3 mm, and the control voltage is 0 V and 5 V.

关 键 词：低温漂 数控衰减器 正电控制 单片微波集成电路(MMIC) 砷化镓 

分 类 号：TN43[电子电信—微电子学与固体电子学]