溅射压强对ATO透明导电薄膜性能的影响  

Effects of sputtering pressure on the properties of the Sb-doped SnO_2 transparent conductive thin films

作　　者：杨啸威 杨文豪[1] 于仕辉[1] 丁玲红[1] 张伟风[1] 

机构地区：[1]河南大学物理与电子学院,河南开封475004

出　　处：《电子元件与材料》2014年第1期9-11,共3页Electronic Components And Materials

基　　金：河南省高校科技创新团队计划资助项目(No.2012IRTSTHN004)

摘　　要：利用射频磁控溅射法在石英衬底上制备得到高质量的锑掺杂二氧化锡(ATO)透明导电薄膜,研究了溅射压强对ATO薄膜的结构和光电性能的影响。结果表明:溅射压强对ATO薄膜的相结构、择优生长取向和结晶质量均有一定的影响。所制薄膜的电阻率随着溅射压强的增加有先减小后增大的规律,并在溅射压强为1 Pa时取得最小值(1.99×10–3?·cm)。不同溅射压强下制备的薄膜在可见光区的透过率均在85%以上。Transparent conductive Sb-doped SnO2 （ATO） thin films were deposited on quartz substrates by radio-frequency magnetron sputtering method. The effects of sputtering pressure on the structure, optical and electrical properties of the films were discussed. The results show that the sputtering pressure has an impact on the phase structure, preferential orientation and crystallinity of the ATO films. The resistivity of the prepared films decreases at first and then increases with the increase of sputtering pressure. When the sputtering pressure is 1 Pa, the film resistivity reaches the lowest point （（1.99×10^-3Ω·cm）. All the deposited films show a good transmittance （over 85%） in visible region.

关 键 词：Sb—SnO2薄膜 磁控溅射 溅射压强 光学性能 电学性能 透明导电 

分 类 号：TM242[一般工业技术—材料科学与工程]