110 GHz以上固态功率放大器的发展现状  

An overview of 110 GHz and above solid-state power amplifiers and circuit topology

作　　者：刘杰[1] 张健[1] 

机构地区：[1]中国工程物理研究院电子工程研究所,四川绵阳621999

出　　处：《太赫兹科学与电子信息学报》2013年第6期836-841,共6页Journal of Terahertz Science and Electronic Information Technology

摘　　要：基于近几年的文献报道,综述了110 GHz以上固态功率放大器的现状和电路结构。归纳了每个固态放大器的工作频率、制作工艺、最大输出功率(Psat)、最大输出的压缩增益、小信号增益、1 dB压缩点增益(P-1),功率附加效率(PAE)、带宽等指标。对每个固态放大器的电路结构进行了总结,讨论了这些电路结构在太赫兹频段的应用。并根据ITRS的文献展望了未来固态晶体管的发展。最后讨论了未来太赫兹固态功率放大器集成到太赫兹数模系统的方式。An overview of 110 GHz and above solid-state integrated circuit power amplifiers and circuit topology is presented based on the latest device technologies in the past several years. The frequency, process, the maximum output power（Psat）, the compression gain, small signal gain, gain of 1 dB compression point（P-1）, power added efficiency（PAE）, bandwidth of those amplifiers/power amplifiers are summarized. The circuit topologies of those amplifiers/power amplifiers and their applications in terahertz regime are discussed. The development trends of future solid-state transistor are expected according to ITRS literatures. The future technologies of integrating terahertz solid-state power amplifiers into terahertz digital-analog systems are discussed.

关 键 词：太赫兹 功率放大器 集成电路 InP器件 SIGE器件 GAAS器件 CMOS器件 GAN器件 

分 类 号：TN722.75[电子电信—电路与系统]