不同p电极下InGaN太阳能电池性能研究  

Effect of p-electrode Grid Spacing on InGaN Based Photovoltaic Cells

作　　者：杨卓[1] 李培咸[1] 张锴[1] 周小伟[2] 

机构地区：[1]西安电子科技大学技术物理学院,陕西西安710071 [2]西安电子科技大学宽禁带半导体材料与器件教育部重点实验室,陕西西安710071

出　　处：《电子科技》2014年第2期112-114,共3页Electronic Science and Technology

摘　　要：利用MOCVD方法在蓝宝石衬底上生长InGaN量子阱结构太阳能电池,并制作出了不同间距和形状的指叉形状p型电极。通过实验对比发现,随着指叉间距的减小,电极面积增加,光吸收面积减小,从而减少了光电流的产生,使得电池效率退化。另据实验发现,由于器件MESA边缘有着更强的电场,相同指叉密度下,将电极制作在器件边缘可取得更好的电池性能。In this study, InGaN/GaN multiple quantum well （MQW） structures photovohaic cells are grown by metal-organic chemical vapor deposition （MOCVD） on the sapphire substrate. Mesh grid p-electrode of two different kinds of shapes with varying mesh grid spacing are fabricated as well. It is found that as mesh grid spacing decrease, the area of the electrode increases and the absorption area decreases, causing degradation in the photovoltaic cells It is also observed that cells whose p-electrode gird deposited at the edges of the chips achieve preferred performance due to the existence of stronger electric fields at the MESA edges.

关 键 词：INGAN 太阳能电池 p电极 指叉间距 

分 类 号：TM914.4[电气工程—电力电子与电力传动]