8nm基区宽度负阻双异质结晶体管的设计与研制  

Design and Fabrication of NDR Double Heterojunction Bipolar Transistor with Base Width of 8 nm

作　　者：郭维廉[1] 张世林[1] 王伊钿[1] 毛陆虹[1] 谢生[1] 

机构地区：[1]天津大学电子信息工程学院,天津300072

出　　处：《纳米技术与精密工程》2014年第1期32-36,共5页Nanotechnology and Precision Engineering

基　　金：国家自然科学基金资助项目(50935001;51275559);工信部科技重大专项资助项目(2011ZX04014-071)

摘　　要：本文利用分子束外延(MBE)技术能精确控制外延层厚度的特点,与选择性腐蚀技术相结合,实现了纳米级超薄基区宽度.利用集电极电压VCE调制中性基区宽度可以改变基极电阻,从而产生微分负电阻(NDR),根据这一物理机制,设计并研制成功性能优良的8 nm基区n-InGaP/P+-GaAs/n-InGaP负阻双异质结晶体管(NDRDHBT).该器件显示出基极电压VBE调制的"∧"型负阻集电极电流IC-集电极电压VCE特性,电流峰谷比(PVCR)趋于无穷大;表征基极电压调制电流能力的峰值电流跨导ΔIP/ΔVBE高达11.2 ms;击穿电压达到12 V,可用于高频振荡调制和高速数字电路.Combining the property of accurate control on epitaxial layer thickness in molecular beam epi taxy （MBE） technology with selection etching technology, ultrathin base width in nanometer scale was realized in this paper. According to the physical mechanism of collector voltage VCE modulating neutral base width to change base resistance to generate negative differential resistance （NDR） , high performance nInGaP/P＋ GaAs/nInGaP NDR double heterojunction bipolar transistors（NDRDHBT） with 8 nm base width were designed and successfully fabricated. The device illustrates the characteristic of ＂ A ＂ typed NDR collector current/ccollector voltage VCE modulated by base voltage VBE, and peakvalley current ra tio （PVCR） approaching infinity; the highest peak current transconductance AIp/AVBE is 11.2 ms, which shows the ability of base voltage modulating current; and the breakdown voltage is 12 V. The device can be applied to high frequency oscillator modulation and high speed digital circuits.

关 键 词：双异质结晶体管 微分负电阻 INGAP 分子束外延 纳米级器件 

分 类 号：TN322.8[电子电信—物理电子学]