乳酸体系抛光液中锇的化学机械抛光  

Chemical Mechanical Polishing of Osmium with Lactic Acid Based Slurry

作　　者：梁淼[1] 储向峰[1] 董永平[1] 张王兵[1] 孙文起[1] 

机构地区：[1]安徽工业大学化学与化工学院,马鞍山243002

出　　处：《纳米技术与精密工程》2014年第1期74-78,共5页Nanotechnology and Precision Engineering

基　　金：国家自然科学基金资助项目(50975002);安徽工业大学创新团队资助项目(TD201204);教育部高校留学回国人员科研资助项目

摘　　要：本文研究了乳酸(HL)体系抛光液中金属锇的化学机械抛光(CMP)行为,采用电化学分析方法和X射线光电子能谱仪(XPS)分析氧化剂和腐蚀抑制剂的作用机理,利用原子力显微镜(AFM)观察抛光前后锇的表面形貌.结果表明,当抛光液仅含有H2O2时,金属锇表面腐蚀不明显;在一定浓度范围内H2O2浓度的增加可以提高金属锇表面的腐蚀速度,但是不利于金属锇表面钝化膜的形成.当抛光条件为:压力为6.895 kPa,转速为50 r/min,抛光液流量为50 mL/min,pH值为5.0;抛光液组成为:SiO2质量分数为1%,HL质量分数为1%,H2O2质量分数为3%时,得到最大去除速率为23.34 nm/min,表面粗糙度Ra为6.3 nm,而将缓蚀剂BTA加入到抛光液后,在同样的抛光条件下得到的锇表面粗糙度更低,表面粗糙度Ra达到2.1 nm.Chemical mechanical polishing （CMP） of osmium （Os） with lactic acid （HL） based slurry was investigated in this paper. By using electrochemical dynamics and X-ray photoelectron spectroscopy （XPS） analysis, mechanisms of slurry components, such as oxidizer and corrosion inhibitor were studied. And Os surface images before and after polishing were analyzed by atomic force microscopy （AFM）. The results show that surface corrosion of Os is not obvious when only H2 02 is the main component in slurry; the increase of H2 02 concentration within a certain concentration range promotes the chemical corrosion speed of Os surface, but inhibits the formation of passive film. The material removal rate maximum can reach 23.34 nm/min and the surface roughness Ra can reach 6.3 nm under the following conditions ： the pressure is 6. 895 kPa, rotation speed is 50 r/rain, pH =5.0 and the slurry is composed of 3% （mass fraction） H202, 1% （ mass fraction） SiO2 and 1% （ mass fraction） HL. Under the same polishing condi- tions after adding inhibitor BTA, better surface quality can be obtained, with surface roughness Ra of 2.1 nm.

关 键 词：化学机械抛光 锇 乳酸 极化曲线 

分 类 号：TG175[金属学及工艺—金属表面处理]