氧掺杂对磁控溅射ZAO薄膜性能的影响  

Effect of oxygen content on the properties of ZAO films deposited by magnetron sputtering

作　　者：刘沅东[1] 张宁[1] 余新平[1] 张至树[1] 汤清琼[1] 

机构地区：[1]北京四方继保自动化股份有限公司,北京100085

出　　处：《真空》2014年第1期41-43,共3页Vacuum

摘　　要：通过磁控溅射氧化铝锌陶瓷靶材的方法在玻璃基片上制备ZAO薄膜,研究了不同氧掺杂量对于ZAO膜电学及光学性能的影响,使用X射线衍射仪衍射分析了薄膜相结构,使用四探针方阻仪测试薄膜的方阻,采用紫外可见分光光度计测试薄膜透过率。结果表明:在通入较低氧分量时对ZAO薄膜结晶性能及光电性能没有太大的影响,但随着氧分量的增加ZAO薄膜性能急剧下降。The ZnO：AI（ZAO） films were deposited by magnetron sputtering of the ceramic target of ZnO doped with 2%（wt.） A1203 on glass substrates, and the effects of oxygen content were studied. The structural characteristics of the films were investigated by the X-ray diffraetometry （XRD）. The resistance and transmittance of ZAO films were studied by the ultraviolet- visible spectrometer and four-point probe method. The results show that the properties of ZAO films decrease with the increase of oxygen content.

关 键 词：磁控溅射 ZAO薄膜 氧含量 

分 类 号：TN304[电子电信—物理电子学] O55[理学—热学与物质分子运动论]